Abstract
This paper considers the Hg1−x Zn x Te alloy system as a potential material for the fabrication of infrared photodiodes. The influence of different junction current components (diffusion, tunneling and depletion layer currents) on the R 0 A product of n+-pHg1−x Zn x Te photodiodes is analysed. The upper theoretical limits of the R 0 A product and detectivity are determined. Results of calculations are compared with experimental data reported by other authors and those measured in our laboratory. Preliminary results on related technology and the properties of Hg1−x Zn x Te prepared by the ion-etching technique are presented.
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