Skip to main content
Log in

Chemical etching of p-type Si(lOO) by K2Cr2O7

A combined investigation by TRMC and XPS, UPS, and LEED

Applied Physics A Aims and scope Submit manuscript

Abstract

Chemical etching of the (100) face of p-type Si by aqueous K2Cr2O7 was investigated with a contactless transient photoconductivity method, i.e. the time-resolved microwave conductivity (TRMC) method, after ns laser pulse excitation and with XPS, UPS, and LEED. TRMC transients after etching show a much slower decay that is explained by a decrease of surface recombination velocity. XPS indicates the formation of a mixed oxide of SiIII and Crv. During heating to ∼600°C this layer first transforms to a SiIV-CrIII oxide. After heating to 1200°C the oxide and Cr at the surface have disappeared, as indicated by UPS (He I and He II) and LEED (sharp 2×1 LEED pattern). However, XPS still shows the presence of Cro which evidently is diffused into the bulk. This can also be deduced from the transient photoconductivity measurements as TRMC transients at this stage show a fast decay rate that must be due to an increased bulk decay rate of excess charge carriers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. T.M. Buck, F.S. McKim: J. Electrochem. Soc.105, 709 (1958)

    Google Scholar 

  2. A.R. Moore, H. Nelson: RCA Rev.17, 5 (1956)

    Google Scholar 

  3. A. Many, Y. Goldstein, N.B. Grover:Semiconductor Surfaces (North Holland, Amsterdam 1965)

    Google Scholar 

  4. E.H. Rhoderick:Metal-Semiconductor Contacts (Clarendon, Oxford 1978)

    Google Scholar 

  5. M. Kunst, A. Werner: J. Appl. Phys.58, 2236 (1985)

    Google Scholar 

  6. M. Kunst, G. Beck: Submitted

  7. J.S. Blakemore:Semiconductor Statistics (Pergamon, Oxford 1962)

    Google Scholar 

  8. H.S. Carslaw, J.C. Jaeger:Conduction of Heat in Solids (Clarendon, Oxford 1959)

    Google Scholar 

  9. D.R. Frankl:Electrical Properties of Semiconductor Surfaces (Pergamon, Oxford 1967)

    Google Scholar 

  10. G. Hollinger, F.J. Himpsel: J. Vac. Sci. Technol.A1, 640 (1983)

    Google Scholar 

  11. G.E. Mullenberg (ed.):Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer, Eden Prairie, MI 55344, 1978)

    Google Scholar 

  12. D. Schmeißer, R.D. Snell, A. Bogen, FJ. Himpsel, D. Rieger, G. Landgren, J.F. Morar: Surf. Scie. (in press)

  13. S.M. Sze:Physics of Semiconductor Devices (Wiley, New York 1980)

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kunst, M., Jaegermann, W. & Schmeißer, D. Chemical etching of p-type Si(lOO) by K2Cr2O7 . Appl. Phys. A 42, 57–64 (1987). https://doi.org/10.1007/BF00618159

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00618159

PACS

Navigation