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Electron emission from insulator and semiconductor surfaces by multiphoton excitation below the optical damage threshold

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Abstract

Electron emission due to 1.06 and 0.35 μm laser excitation has been measured at several pulse lengths for a number of wide bandgap semiconductors and insulators. The dependence on fluence and wavelength is consistent with multiphoton excitation across the bandgap. The work functions of the materials investigated do not appear to influence the rate-limiting multiphoton excitation process.

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References

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Authors and Affiliations

  1. Lawrence Livermore National Laboratory, University of California, P.O. Box 5508, L-490, 94550, Livermore, CA, USA

    W. J. Siekhaus, J. H. Kinney, D. Milam & L. L. Chase

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  1. W. J. Siekhaus
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  2. J. H. Kinney
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  3. D. Milam
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  4. L. L. Chase
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Siekhaus, W.J., Kinney, J.H., Milam, D. et al. Electron emission from insulator and semiconductor surfaces by multiphoton excitation below the optical damage threshold. Appl. Phys. A 39, 163–166 (1986). https://doi.org/10.1007/BF00620730

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  • DOI: https://doi.org/10.1007/BF00620730

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