Abstract
A new, simple and reliable method for Hall effect measurements is introduced. The method employs a capacitive probe technique and requires neither special shaping of samples nor probing Hall contacts. With this method, Hall effect measurements onp-Ge have been first extended to high electric fields up to 3kV/cm at 4.2 K. The wide applicability of this method is discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
For the Hall effect measurements of hot electrons at higher temperatures above 77K, see, for example, [2–4]
H. Heinrich, E. Müller: In Proc. 9th Intern. Conf. Physics of Semiconductors, Moscow, 1968 (Nauka, Leningrad 1968), pp. 990–995
H. Heinrich, K. Lischka: Phys. Rev. B2, 2009–2016 (1970)
M. Kriechbaum, H. Heinrich, J. Wajda: J. Phys. Chem. Solids33, 829, 839 (1972)
S. Komiyama, R.Spies: Phys. Rev. B (1981) (in press)
N. Sclar, E. Burstein: J. Phys. Chem. Solids2, 1–23 (1957)