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SIMS depth profile analysis for investigations of the lithium-diffusion in hydrogenated amorphous silicon

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Summary

SIMS depth profiling, using an oxygen primary beam at close to normal incidence, was applied to study lithium diffusion in thin films of hydrogenated amorphous silicon (a-Si:H) as well as in layered structures of doped and undoped silicon-based alloys. A strongly increasing decay length of the lithium profiles was observed for increasing primary beam energies and is attributed to the Li accumulation at the SiOx/Si interface. The stability of the lithium incorporation in a-Si:H is found to depend on the presence of charged acceptors or defects and of doping gradient related electrical fields.

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Authors and Affiliations

  1. Institut für Schicht- und Ionentechnik (ISI-PV) Forschungszentrum Jülich, P. O. Box 1913, W-5170, Jülich, Germany

    U. Zastrow, W. Beyer & J. Herion

Authors
  1. U. Zastrow
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  2. W. Beyer
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  3. J. Herion
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Zastrow, U., Beyer, W. & Herion, J. SIMS depth profile analysis for investigations of the lithium-diffusion in hydrogenated amorphous silicon. Fresenius J Anal Chem 346, 92–95 (1993). https://doi.org/10.1007/BF00321389

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  • DOI: https://doi.org/10.1007/BF00321389

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