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SNMS studies of ULSI gate interconnection structures

  • Part I
  • Secondary Neutral Mass Spectrometry And Laser Photoionization
  • Published:
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Summary

Polycide gate structures are widely used in ULSI (Ultra Large Scale Integration) devices. The distribution of the dopant between the various layers is of major concern. The effects of the fluorine incorporated during WSi2 deposition have been discussed because fluorine may diffuse into the gate oxide. We have studied the redistribution of boron, phosphorus and fluorine in WSi2/poly/SiO2/poly/SiO2/Si (bulk) gate structures by using hot e-gas SNMS and nuclear analyses (RBS/NRA), in samples subjected to thermal treatments that simulate the different steps of the ULSI fabrication sequence.

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Authors and Affiliations

  1. IRST — Divisione di Scienza dei Materiali, I-38050, Povo, Trento, Italy

    L. Moro, P. Lazzeri & M. Anderle

  2. Dipartimento di Fisica, Università di Modena, I-41100, Modena, Italy

    G. Ottaviani

  3. SGS — Thomson Microelectronics, I-20041, Agrate, Milano, Italy

    L. Bacci & G. Queirolo

Authors
  1. L. Moro
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  2. P. Lazzeri
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  3. G. Ottaviani
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  4. L. Bacci
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  5. G. Queirolo
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  6. M. Anderle
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Moro, L., Lazzeri, P., Ottaviani, G. et al. SNMS studies of ULSI gate interconnection structures. Fresenius J Anal Chem 341, 20–24 (1991). https://doi.org/10.1007/BF00322100

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  • DOI: https://doi.org/10.1007/BF00322100

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