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Spectrographic analysis of semiconductor grade B2O3

Spektrographische Analyse von Halbleiter-B2O3

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Zusammenfassung

Ein Verfahren zur Spurenbestimmung von Al, Ca, Cr, Fe, Mg, Mn, Ni, Pb, Si und Sn in Bortrioxid wurde ausgearbeitet. Die Probe wird nach Umsetzen zu Borsäure mit einem Träger gemischt, der aus NaF und Graphit (1∶4) besteht. Dadurch wird der durch BO-Emission verursachte Untergrund reduziert. Die Nachweisgrenzen liegen im Bereich 2–12 ppm, die Genauigkeit beträgt 7–18%, der relative Fehler ± 15%.

Summary

An emission spectrographic method for the estimation of trace amounts of Al, Ca, Cr, Fe, Mg, Mn, Ni, Pb, Si and Sn in high purity boron trioxide has been developed. The sample after conversion to boric acid is mixed with a carrier consisting of sodium fluoride and graphite in the ratio 1∶4. By use of this carrier, the background due to BO emission is reduced. The detection limits lie in the range of 2–12 ppm for different elements. The precision of the method ranges from 7–18% for these elements, while the relative error is ± 15%.

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Authors and Affiliations

  1. Spectroscopy Division, Bhabha Atomic Research Centre, 400085, Trombay, Bombay, India

    R. Venkatasubramanian, R. M. Dixit & T. R. Saranathan

Authors
  1. R. Venkatasubramanian
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  2. R. M. Dixit
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  3. T. R. Saranathan
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Venkatasubramanian, R., Dixit, R.M. & Saranathan, T.R. Spectrographic analysis of semiconductor grade B2O3 . Z. Anal. Chem. 271, 357–358 (1974). https://doi.org/10.1007/BF00820740

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  • DOI: https://doi.org/10.1007/BF00820740

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