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Determination of the stoichiometry of semiconductor systems of the type CdvHg1−vSe and CdxHg1−xTe by X-ray fluorescence spectrometry

Bestimmung der Stöchiometrie von Halbleitersystemen des Typs CdvHg1−vSe und CdxHg1−xTe, durch Röntgenfluorescenz-Spektrometrie

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Zusammenfassung

Halbleiter der Typen Cd v Hg1−v Se und Cd x Hg1−x Te gewinnen zunehmend industrielles Interesse. Der Energieabstand der Bänder in solchen Systemen hängt entscheidend von der Größe der Molenbrüche v und x ab. Ein einfaches und sicheres Analysenverfahren zur Ermittlung der Stöchiometrie ist die Röntgenfluorescenzanalyse von sauren Lösungen dieser Kristalle. Die Probenvorbereitung, Eichreihen und Resultate werden diskutiert.

Summary

Semiconductors of the composition Cd v Hg1−v Se and Cd x Hg1−x Te are gaining growing industrial interest. The energy gap between the bands of such systems depends significantly on the magnitude of the mole fractions v and x. X-ray fluorescence analysis of acid solutions of these crystals is a simple and precise procedure to determine the stoichiometry. Sample preparation, calibration series and results are discussed.

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References

  1. Freiburg, C.: Automatisches Streichen von Ausreißern bei der Approximation von Eichkurven für die RFA, p. 49, 9. Spektrometertagung 1972, Kurzreferate

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Delegated to Central Institute of Analytical Chemistry, Nuclear Research Establishment (KFA), Jülich, FRG.

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Schreiber-Pawlak, K., Reichert, W. & Freiburg, C. Determination of the stoichiometry of semiconductor systems of the type CdvHg1−vSe and CdxHg1−xTe by X-ray fluorescence spectrometry. Z. Anal. Chem. 270, 198–200 (1974). https://doi.org/10.1007/BF00445956

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  • DOI: https://doi.org/10.1007/BF00445956

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