Abstract
Optical spectra of molecular species sputtered from nitrogen, and carbon-oxygen implanted silicon are analysed and compared with the predictions of the accompanying theoretical paper. The dominant emission in both systems corresponds to the extensive rovibrational excitation predicted for a sputtering source. The molecules N2, CO, and/or CO+ appear to be the primary electronically excited species. The N2 excitation mechanism in the nitrogen-silicon system is suggested to be similar to that producing the Lewis-Rayleigh afterglow, namely, the associative reaction N(4S0) + N(4S0)⇌N 52 ∑ + g followed by the stabilization mechanism N 52 ∑ + g +M⇌N2B3 Π g +M, whereM represents the surface. Additional weak SiNB2 ∑ +, N2C3 Π u and N 52 B2 ∑ + u excitation is analysed, and its origin discussed.
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Some of the measurements reported here were performed while the authors were affiliated with the Max-Planck-Institute for Plasmaphysik, Garching. The active encouragement for this work of Dr. R. Behrisch is gratefully acknowledged, as are fruitful discussions with Dr. E. Taglauer and technical assistance of F. Schuster, H. Hupfloher and K. Gehringer.
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Snowdon, K.J., Heiland, W. Rotational and vibrational excitation of sputtered diatomic molecules. Z Physik A 318, 275–284 (1984). https://doi.org/10.1007/BF01418084
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DOI: https://doi.org/10.1007/BF01418084