Die Herstellung dünner Silizium-Einkristallschichten durch Kathodenzerstäubung

Abstract

Thin silicon single-crystal films some 100 Å thick have been prepared from silicon single-crystal disks by mechanical polishing and subsequent bombardment with argon-ions of 1500 eV energy in a controlled Penning-discharge (at 1 micron argon pressure). Mechanical polishing prevented the formation of etch pits during ion bombardment, so that specimens with large thin areas of some 100 microns diameter can be obtained. The silicon disks remain single-crystal during the thinning process, the films were tested by means of electron-diffraction, the transmission patterns show sharp Kikuchi-lines with an angular width of 1 or 2 minutes.