Abstract
The optical properties of structures with InAs islands and narrow GaAs quantum wells in an AlGaAs host have been investigated. The InAs islands were formed by depositing a layer of InAs with an effective thickness less than one monolayer. The effect of an exciton waveguide and the onset of lasing due to optical pumping in the red spectral range are demonstrated in structures without external optical confinement by layers with a lower refractive index.
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Fiz. Tekh. Poluprovodn. 33, 488–491 (April 1999)
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Tsatsul’nikov, A.F., Volovik, B.V., Ledentsov, N.N. et al. Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host. Semiconductors 33, 467–470 (1999). https://doi.org/10.1134/1.1187713
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DOI: https://doi.org/10.1134/1.1187713