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Photocurrent amplification in Au/SiO2/n-6H-SiC MOS structures with a tunnel-thin insulator

  • Physics of Semiconductor Devices
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Abstract

The first observation of amplification of the photogeneration current in Au/SiO2/n-6H-SiC structures with a tunnel-thin insulator is reported. This effect can be used to increase the efficiency of existing UV-range 6H-SiC-based photodiodes. It also shows that bipolar SiC transistors with a MOS tunnel emitter can be produced.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    I. V. Grekhov, M. I. Veksler, P. A. Ivanov, T. P. Samsonova & A. F. Shulekin

Authors
  1. I. V. Grekhov
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  2. M. I. Veksler
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  3. P. A. Ivanov
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  4. T. P. Samsonova
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  5. A. F. Shulekin
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Additional information

Fiz. Tekh. Poluprovodn. 32, 1145–1148 (September 1998)

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Grekhov, I.V., Veksler, M.I., Ivanov, P.A. et al. Photocurrent amplification in Au/SiO2/n-6H-SiC MOS structures with a tunnel-thin insulator. Semiconductors 32, 1024–1026 (1998). https://doi.org/10.1134/1.1187538

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  • DOI: https://doi.org/10.1134/1.1187538

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