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Influence of fast-neutron irradiation on the intensity of the copper-related luminescence band at hν m =1.01 eV in n-type GaAs

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Abstract

The influence of neutron irradiation (the energy E=2 MeV and the dose Φ=1013–1015cm−2) and subsequent anneals (the annealing temperature T a =400–700 °C and the annealing time is 30 min) of n-type GaAs(Te,Cu) crystals with an initial carrier concentration n 0=2×1018 cm−3 on the intensity of the copper-related luminescence band with an emission maximum at hν m =1.01 eV is studied. A significant irradiation-induced increase in the intensity of the band is observed. It is attributed to a radiation-stimulated increase in the concentration of emitting centers (CuGa V As pairs) as a result of the effective interaction of interstitial copper atoms with irradiation-induced gallium (V Ga) and arsenic (V As) vacancies, as well as V Ga V As divacancies.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Ukrainian National Academy of Sciences, 252028, Kiev, Ukraine

    K. D. Glinchuk & A. V. Prokhorovich

Authors
  1. K. D. Glinchuk
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  2. A. V. Prokhorovich
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Fiz. Tekh. Poluprovodn. 31, 1171–1173 (October 1997)

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Glinchuk, K.D., Prokhorovich, A.V. Influence of fast-neutron irradiation on the intensity of the copper-related luminescence band at hν m =1.01 eV in n-type GaAs. Semiconductors 31, 1006–1007 (1997). https://doi.org/10.1134/1.1187014

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  • DOI: https://doi.org/10.1134/1.1187014

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