Abstract
Superconducting thin films of HgBa2CuO4 have been grown in situ by using a sputtering method for the first time. (100) SrTiO3 was used as substrates and heated between 500 ° C to 600 ° C during the film deposition. By setting the deposition conditions properly, c axis oriented HgBa2CuO4 films were grown perpendicularly to the substrate surface. It was found that Hg composition in the deposited films had close relation to the sputtering gas, namely, the oxygen partial pressure, Hg could remain in the film when the partial pressure of oxygen was lower than in the case of the other oxide superconductors such as Bi cuprates. The optimum oxygen partial pressure for the crystallized thin film ranged from 0.1 Pa to 0.01 Pa with total gas pressure of 0.6 Pa. The superconducting transition was observed at around 75K.
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