Abstract
Nb100−x B x alloy films were prepared by the r.f.-sputtering method in the chemical composition range of 30 ≦x ≦ 76. Nb100−x B x (30 ≦x ≦ 54) films consisted of the amorphous state, and NbB2 crystal phase was observed on Nb100−xBx (67 ≦x ≦ 76) films. A remarkable preferred orientation with the (001) plane of NbB2 in parallel to the film surface was observed on Nb33B67 film. d.c. electrical conductivity of Nb100−xBx (30 ≦x ≦ 76) films decreased with increasing content of boron in the range from 7.3×103 to 7.6 ×102Ω−1cm−1. Micro-Vickers hardness of Nb100−x B x (30 ≦x ≦ 76) films exhibited the values of 1070 to 2060 kg mm2.
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Oda, K., Yata, H., Yoshio, T. et al. Properties of Va metal-B films prepared by r.f.-sputtering. J Mater Sci 21, 3648–3652 (1986). https://doi.org/10.1007/BF02403015
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DOI: https://doi.org/10.1007/BF02403015