Summary
The optical nonlinearities produced by screening of the piezoelectric field byphotogenerated carriers in a [111]-grown (In, Ga)As/(Al, Ga)As single strained-layer quantum well structure are calculated and compared with those in a [001]-grown structure. Nonlinear absorption and refractive index spectra show that screening of the strain-induced electric field by photo-carriers that have escaped from the [111]-grown quantum well produces optical nonlinearities comparable to those in the more conventional [001]-grown quantum well.
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Livingstone, M., Galbraith, I. & Wherrett, B.S. Screening effects in piezoelectric strained [111]-Grown (In, Ga) As/(Al, Ga) As quantum wells. Il Nuovo Cimento D 17, 1595–1599 (1995). https://doi.org/10.1007/BF02457249
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DOI: https://doi.org/10.1007/BF02457249