Strength and fracture toughness of in situ-toughened silicon carbide

Abstract

Fine β-SiC powders either pure or with the addition of 1 wt % of α-SiC particles acting as a seeding medium, were hot-pressed at 1800 °C for 1 h using Y₂O₃ and Al₂O₃ as sintering aids and were subsequently annealed at 1900 °C for 2, 4 and 8 h. During the subsequent heat treatment, the β → α phase transformation of SiC produced a microstructure of “in situ composites” as a result of the growth of elongated large α-SiC grains. The introduction of α-SiC seeds into the β-SiC accelerated the grain growth of elongated large grains during annealing which led to a coarser microstructure. The sample strength values decreased as the grain size and fracture toughness continued to increase beyond the level where clusters of grains act as fracture origins. The average strength of the in situ-toughened SiC materials was in the range of 468–667 MPa at room temperature and 476–592 MPa at 900 °C. Typical fracture toughness values of 8 h annealed materials were 6.0 MPa m^1/2 for materials containing α-SiC seeds and 5.8 MPa m^1/2 for pure β-SiC samples.