Abstract
Copper was deposited on to TiN by low-pressure metal-organic chemical vapour deposition, using hexafluoroacetylacetonate-Cu+1-trimethylvinylsilane (hfacCu(I)TMVS) and argon carrier gas. The resistivity of the deposited copper films was investigated by observing the effects of the deposition temperature on the composition, microstructure and surface morphology of the copper films. The resistivity of the copper films decreases as the deposition temperature decreases. The copper films deposited at high temperatures, tend to contain the pores and or/ channels as well as carbon and oxygen, which results in the increase of the resistivity of the deposited films. The pores and/or channels come from the island-like growth of the copper films, while carbon and oxygen are due to the concurrent thermal decomposition of hfac during the disproportionation reaction between hfacCu(I) molecules.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
E. J. RYMASZEWSKY, J. Electron. Mater. 18 (1989) 217.
G. LARRABEE and P. CHATTERJEE, Semicond. Int. 14 (May, 1991) 84.
W. C. HOLTON, SPIE 1392 (1990) 27.
W. C. SHUMAY Jr. Adv. Mater. Process. 135 (1989) 43.
T. SEIDEL, in “Proceedings of the Sematech Fourth Annual Sematech Centers of Excellence (SCOE) Technology Transfer Meeting”, (11 March, 1992) p. 121.
P. L. PAI, C. H. TING, C. CHIANG, C. S. WEI and D. B. FRASER, “Copper Interconnection for VLSI and Beyond”, MRS Symposia Proceedings VLSI V 1990, p. 359.
ALAIN E, KALOYEROS and MICHAEL A. FURY, MRS Bull. June (1993) 22.
J. A. T. NORMAN, B. A. MURATONE, P. N. DYER, D. A. ROBERTS, A. K. HOCHBERG and L. H. DUBOIS, J. Mater. Sci. Eng. B17 (1993) 87.
S. MURARKA, “Overview of Technology”, in Conference Proceedings VLSI VI (1991) p. 179.
RAVI KUMAR, Chem Mater. 4 (1992) 577.
M. J. HAMPDEN-SMITH, T T. KODAS, M. PAFFETT, J. D. FARR and H. K. SHIN, ibid. 2 (1990) 636.
A. JAIN, Semicond. Int. (June) 16 (1993) 128.
S. K. REYNOLDS, C. J. SMART, E. F. BARAN, T. H. BAUM, C. E. LARSON and P. J. BROCK, Appl. Phys. Lett. 59 (1991) 2332.
THOMASH BAUM and CARL E. LARSON, J. Electrochem. Soc. 140 (1993) 154.
J. D. MCBRAYER, ibid. 133 (1986) 1262.
KLAUS K. SCHUEGRAF, “Handbook of Thin-Film Deposition Processes and Techniques” (Noyes, Park Ridge, NJ, 1988) p. 241.
J. A. T. NORMAN, B. A. MURATORE, P. N. DYER, D. A. ROBERTS and A. K. HOCHBERG, in “Proceedings of the International Very-Large-Scale Integration Multilevel Interconnection Conference, Santa Clara, CA, 11–12 June 1991 (IEEE, New York, 1991) p. 123.
V. M. DONNELLY and M. E. GROSS, J. Vac. Sci. Technol. A 11 (1993) 66.
LEON I. MAISSEL and REINHARD GLANG, “Handbook of Thin Film Technology” (McGraw-Hill, New York, 1983) Ch. 8, p. 35.
H. R. PHILIPP, Phys. Rev. 120 (37) (1960) 37.
D. DRISCOLL, “Handbook of Optics” (Mcgraw-Hill, New York, 1978).
K. L. CHIANG, C. J. DELL'OCA and F. N. SCHWETTMANN, J. Electrochem. Soc. 126 (1979) 2267.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Yoon, S.S., Min, J.S. & Chun, J.S. Effects of the deposition temperature on the resistivity of copper films produced by low-pressure metal-organic chemical vapour deposition on a TiN barrier layer. JOURNAL OF MATERIALS SCIENCE 30, 2029–2034 (1995). https://doi.org/10.1007/BF00353029
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/BF00353029