Abstract
Cadmium selenide (CdSe) films have been electrodeposited from a bath containing CdSO4 and SeO2. The pH of the bath was around 2. The deposition was done by short circuiting different substrates like Indium Tin Oxide ITO, molybdenum, sodium selenosulphite etc. to an easily oxidizable electrode (such as Al/Cd) in an electrolytic bath. The temperature of the deposition bath was varied in the range 60 to 85 ° C. The as-grown films were characterized by X-ray diffraction and scanning electron microscopy. Electrical characterization of the ITO/ CdSe/In structure was made by studying the current-voltage characteristics. Optical absorption measurements yielded a direct band gap around 1.65eV.
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Murali, K.R., Radhakrishna, I., Nagaraja Rao, K. et al. Growth of cadmium selenide layers by electrodeposition. J Mater Sci 25, 3521–3523 (1990). https://doi.org/10.1007/BF00575381
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DOI: https://doi.org/10.1007/BF00575381