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The chemical polishing of semiconductors

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Abstract

The review first considers the types of reaction which occur when a semiconductor is chemically polished, taking the dissolution of silicon in nitric acid solutions as an example. Most initial reactions are of the oxidation-reduction type, which can be separated into their anodic and cathodic components. It is shown that electrons and holes can take part in both parts of the reaction, so chemical polishing can interfere with the carrier concentrations close to the surface being polished. In general, the products of the initial reaction are not soluble, so it is necessary to include a component in the polishing solution which will react to give soluble material, which can then be removed from the surface. The factors controlling the dissolution rate are then outlined. It is shown that polishing processes are conveniently divided into two main groups: (1) those for which the rate-limiting process is some aspect of the chemical reaction, and (2) those for which diffusion of atoms to or from the surface controls the rate.

Crystallographic effects are discussed. It is shown that different surface orientations are etched at different rates, and possible reasons for this are outlined. The various types of surface features that can be observed under the microscope after polishing are then described, and their origins are discussed. A review of some of the more extensive investigations is then given, followed by an Appendix containing lists of chemical polishes that have been used for semiconductors of groups IV, III–V and II–VI.

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  1. Department of Electrical and Electronic Engineering, The University of Nottingham, UK

    Brian Tuck

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Tuck, B. The chemical polishing of semiconductors. J Mater Sci 10, 321–339 (1975). https://doi.org/10.1007/BF00540357

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