Abstract
Implanted radioactive 167Tm / 167Er and 169Yb / 169Tm impurities in Si and GaN were studied with emission channeling and photoluminescence spectroscopy. The effect of co-doping with oxygen on the rare earth (RE) lattice sites and their luminescence behavior was investigated. Tm and Yb occupy near-tetrahedral sites in Si and substitutional sites in GaN after room temperature implantation and annealing. O-RE complexes are formed upon co-doping with O resulting in modified luminescence signals. RE impurities remain substitutional in O-doped GaN, but are displaced from tetrahedral sites in O-doped Si. We discuss the feasibility of Mössbauer studies using 151Eu, 169Tm and 161Dy to determine the RE valence state and to identify RE defect complexes.
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References
G.S. Pomrenke, P.B. Klein and D.W. Lander, eds., Rare Earth Doped Semiconductors, Math. Res.Soc. Proc. 301 (1993); S. Coffa, A. Polman and R.N. Schwartz, eds., Rare Earth Doped Semiconductors II, Math. Res.Soc. Proc. 422 (1996).
S. Coffa, G. Franzò and F. Priolo, MRS Bull. 23(4) (1998) 25.
J. Michel, J.L. Benton, R.F. Ferrante, D.C. Jacobson, D.J. Eaglesham, E.A. Fitzgerald, Y.H. Xie, J.M. Poate and L.C. Kimerling, J. Appl. Phys. 70 (1991) 2672.
H. Przybylinska, W. Jantsch, Y. Uprun-Belevitch, M. Stephikhova, L. Palmetshofer, G. Hendorfer, A. Kozanecki, R.J. Wilson and B.J. Sealy, Phys. Rev. B 54 (1996) 2532.
S.Y. Ren and J.D. Dow, J. Appl. Phys. 81 (1997) 1877.
A. Terrasi, G. Franzo, S. Coffa, F. Priolo, F. D'Acapito and S. Mobilio, Appl. Phys. Lett. 70 (1997) 1712.
U. Wahl, A. Vantomme, J. De Wachter, R. Moons, G. Langouche, J.G. Marques, J.G. Correia and the ISOLDE Collaboration, Phys. Rev. Lett. 79 (1997) 2069.
M. Needels, M. Schl¨uter and M. Lanoo, Phys. Rev. B 47 (1993) 15533.
U. Wahl, J.G. Correia, G. Langouche, A. Vantomme and the ISOLDE Collaboration, Math. Res.Soc. Symp. Proc. 486 (1998).
A. Bhagawat, K.G. Prasad and R.P. Sharma, Hyp. Interact. 42 (1988) 977.
F.S. Nasredinov, M.M. Mezdrogina, P.P. Seregin, U.Z. Abdumanapov and U.S. Tursunov, Phys.Status Solidi (b) 155 (1989) K113.
J.A. Sawicki, T. Tyliszczak, B.D. Sawicka and J. Kowalski, Phys. Lett. A 91 (1982) 414.
P.N. Favennec, H. L'Hadrion, D. Moutonnet, M. Salvi and M. Gaunneau, Electron. Lett. 25 (1989) 718.
J.T. Torvik, C.H. Qiu, R.J. Feuerstein, J.I. Pankove and F. Namaver, J. Appl. Phys. 81 (1997) 6343.
M. Thaik, U. H¨ommerich, R.N. Schwartz, R.G. Wilson and J.M. Zavada, Appl. Phys. Lett. 71 (1997) 2641.
M. Dalmer, M. Restle, A. Stötzler, U. Vetter, H. Hofsäss, M.D. Bremser, C. Ronning, R.F. Davis and the ISOLDE Collaboration, Math. Res. Soc. Proc. 482 (1998).
S. Kim, S.J. Rhee, D.A. Turnbull, X. Li, J.J. Coleman, S.G. Bishop and P.B. Klein, Appl. Phys.Lett. 71 (1997) 2662.
H. Hofs¨ass, Hyp. Interact. 97/98 (1996) 247.
G. Langouche, Hyp. Interact. 45 (1989) 199.
R.G. Barnes, in: Handbook of the Physics and Chemistry of Rare Earths, eds. K. Gschneider and L. Eyring (North-Holland, Amsterdam, 1979) p. 387.
B. Khurgin, S. Ofer and M. Rakavy, Phys. Lett. A 33 (1970) 219.
W. Henning, G. Kaindl, P. Kienle, H.J. K¨orner, H. Kulzer, K.E. Rehm and N. Edelstein, Phys. Lett.A 28 (1968) 209.
E. Kankeleit, F. Boehm and R. Hager, Phys. Rev. 134 (1964) B747.
F.E. Wagner, Z. Phys. 210 (1968) 361.
V.F. Masterov, F.S. Nasredinov, P.P. Seregin, V.Kh. Kudoyarova, A.N. Kuznetsov and E.I. Terukov, Appl. Phys. Lett. 72 (1998) 728.
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Dalmer, M., Vetter, U., Restle, M. et al. Combination of emission channeling, photoluminescence and Mössbauer spectroscopy to identify rare earth defect complexes in semiconductors. Hyperfine Interactions 120, 347–352 (1999). https://doi.org/10.1023/A:1017064532027
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DOI: https://doi.org/10.1023/A:1017064532027