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Mu centers in crystalline Ge under illumination

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Abstract

A slow conversion to a diamagnetic state has been observed for muonium centers at the tetrahedral interstitial site (Mu0 T) in dark Ge at low temperatures. While the conversion process is affected by illumination, no effect of illumination upon the initial (Mu0 T) centers themselves was observed at 10 K. This is in marked contrast with the case of (Mu0 T) centers in Si where strong interaction with photo‐induced carriers is observed, suggesting that the electronic level associated with (Mu0 T) state in Ge is not located in the energy gap.

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Kadono, R., Macrae, R., Nagamine, K. et al. Mu centers in crystalline Ge under illumination. Hyperfine Interactions 105, 303–308 (1997). https://doi.org/10.1023/A:1012624009717

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