Abstract
A slow conversion to a diamagnetic state has been observed for muonium centers at the tetrahedral interstitial site (Mu0 T) in dark Ge at low temperatures. While the conversion process is affected by illumination, no effect of illumination upon the initial (Mu0 T) centers themselves was observed at 10 K. This is in marked contrast with the case of (Mu0 T) centers in Si where strong interaction with photo‐induced carriers is observed, suggesting that the electronic level associated with (Mu0 T) state in Ge is not located in the energy gap.
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For a comprehensive review, see, for example, B.D. Patterson, Rev. Mod. Phys. 60 (1988) 69.
A summary of recent results is given by R.F. Kiefl and T.L. Estle, in: Hydrogen in Semiconductors, eds. J. Pankove and N.M. Johnson (Academic Press, New York, 1990) 547.
Yu.V. Gorelkinskii and N.N. Nevinnyi, Pis’ma Zh. Tekh. Fiz. 13 (1987) 105 [Sov. Tech. Phys. Lett. 13 (1987) 45].
R. Kadono, A. Matsushita, R.M. Macrae, K. Nishiyama and K. Nagamine, Phys. Rev. Lett. 73 (1994) 2724.
K.H. Chow, R.F. Kiefl, J.W. Schneider, B. Hitti, T.L. Estle, R.L. Lichti, C. Schwab, R.C. DuVarney, S.R. Kreitzman, W.A. MacFarlane and M. Senba, Phys. Rev. B 47 (1993) 16004.
S.R. Kreitzman, B. Hitti, R.L. Lichti, T.L. Estle and K.H. Chow, Phys. Rev. B 51 (1995) 13117.
See, for example, the review by C.G. Van de Walle, in: Hydrogen in Semiconductors, eds. J. Pankove and N.M. Johnson (Academic Press, New York, 1990) 585.
A. Weidinger, G. Balzer, H. Graf, E. Recknagel and Th. Wichert, Phys. Rev. B 24 (1981) 6185.
R. Kadono, R.M. Macrae, K. Nishiyama and K. Nagamine, to be published.
I.G. Ivanter and V.P. Smilga, Zh. Eksp. Teor. Fiz. 54 (1968) 559; 55 (1969) 1521 [Sov. Phys. JETP 27 (1968) 301; 28 (1969) 796].
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Kadono, R., Macrae, R., Nagamine, K. et al. Mu centers in crystalline Ge under illumination. Hyperfine Interactions 105, 303–308 (1997). https://doi.org/10.1023/A:1012624009717
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DOI: https://doi.org/10.1023/A:1012624009717