Abstract
Investigations were made of the electrical properties, the cathodolumiescence and photoconductivity spectra, and the temperature dependence of the majority carrier lifetime in gallium arsenide with a high concentration of tin (n=2·1018 cm−3, 1.5·1017 cm−3) that was doped with copper under different diffusion regimes. Measurements of the Hall effect revealed centers with an ionization energy 0.175 ± 0.005 eV, their concentration depending on the rate of cooling of the samples. The cathodoluminescence and Hall effect data suggest that the cathodoluminescence band observed at 1.35 eV in GaAs∶Sn∶Cu is associated with radiative transitions of electrons to centers with ε a =Ev + 0.175 eV. The hole lifetime in GaAs∶Sn∶Cu has a complicated temperature dependence which can be explained qualitatively by the presence of two types of capture center.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 58–63, September, 1980.
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Kamenskaya, I.V., Krivov, M.A., Malisova, E.V. et al. Behavior of copper in gallium arsenide with high tin concentration. Soviet Physics Journal 23, 801–806 (1980). https://doi.org/10.1007/BF00892529
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DOI: https://doi.org/10.1007/BF00892529