Abstract
The hydrolytic generation of SiO2 films from chlorosilanes or alkoxysilanes is interrupted by incorporating labile organic groups which stop SiO2 formation at a processable prepolymer stage. The monomers for the prepolymer have electron withdrawing substituents in the β -position. The organic groups are removed from the prepolymer at low temperature, extruding ethylene. The formation of SiO2 proceeds by intramolecular condensation of the electronegative substituents which are now in a hydrolytically unstable bond with silicon and hydroxyl groups or ambient moisture. Films of the prepolymer spun onto silicon wafers are converted into uniform SiO2-rich films at temperatures between 150–400°C.
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Arkles, B., Berry, D.H., Figge, L.K. et al. Staged Development of Modified Silicon Dioxide Films. Journal of Sol-Gel Science and Technology 8, 465–469 (1997). https://doi.org/10.1023/A:1018333823471
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DOI: https://doi.org/10.1023/A:1018333823471