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Non-equilibrium spin accumulation in ferromagnetic single-electron transistors

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Abstract:

We study transport in ferromagnetic single-electron transistors. The non-equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time-dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non-equilibrium spin accumulation.

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Authors and Affiliations

  1. Delft University of Technology, Laboratory of Applied Physics and Delft Institute of Microelectronics and Submicrontechnology (DIMES), 2628 CJ Delft, The Netherlands, , , , , , NL

    A. Brataas, Yu.V. Nazarov, J. Inoue & G.E.W. Bauer

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  1. A. Brataas
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  2. Yu.V. Nazarov
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  3. J. Inoue
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  4. G.E.W. Bauer
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Received 6 May 1998

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Brataas, A., Nazarov, Y., Inoue, J. et al. Non-equilibrium spin accumulation in ferromagnetic single-electron transistors. Eur. Phys. J. B 9, 421–430 (1999). https://doi.org/10.1007/s100510050784

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  • DOI: https://doi.org/10.1007/s100510050784

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