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Temperature dependence of a lattice defect induced electric fieldgradient at181Ta in Pt

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Zeitschrift für Physik B Condensed Matter

Abstract

By implantation of181Hf ions radiation damage is produced in platinum. Subsequent annealing of the samples leads to the trapping of a unique defect at the probe atoms. The temperature dependence of the resulting electric field gradient eq(T) is measured by use of the TDPAC-method. Assuming a relation eq(T)=eq(0)·(1−B·T 3/2) one findsB=(1.9±0.7)×10−6 K−3/2. This low value is of the same magnitude as the corresponding values for111Cd in various locally distorted cubic metals.

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Müller, H.G., Krien, K., Pütz, U. et al. Temperature dependence of a lattice defect induced electric fieldgradient at181Ta in Pt. Z Physik B 32, 315–318 (1979). https://doi.org/10.1007/BF01351509

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  • DOI: https://doi.org/10.1007/BF01351509

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