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Stress investigations of thin amorphous Ge-Se-Ga films

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Abstract.

Thin chalcogenide films from the systems (GeSe4)1-xGax and (GeSe5)1-xGax with gallium contents up to 20 at. % have been prepared by vacuum evaporation and their stress has been investigated by a cantilever technique. The addition of gallium to the Ge-Se matrix plays an important role in stress formation in the films: films without gallium possess negligible stress, while all gallium-containing films are under compressive stress. The increase of the gallium content leads to structural changes and an increase in the density, which results in higher stress values. For all films, stress reduction with time is observed due to spontaneous relaxation.

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Authors and Affiliations

  1. Institute of Microstructure Technologies and Analytics (IMA), University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany, , , , , , DE

    C. Popov & W. Kulisch

  2. Department of Physics, University of Chemical Technology and Metallurgy, 8 Kliment Ohridsky Str., 1756 Sofia, Bulgaria, , , , , , BG

    P. Petkov, Y. Nedeva & P. Ilchev

Authors
  1. C. Popov
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  2. P. Petkov
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  3. Y. Nedeva
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  4. P. Ilchev
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  5. W. Kulisch
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Additional information

Received: 2 October 2002 / Accepted: 22 November 2002 / Published online: 28 March 2003

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ID="*"Corresponding author. Fax: +49-561/8044-136, E-mail: popov@schottky.physik.uni-kassel.de

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Popov, C., Petkov, P., Nedeva, Y. et al. Stress investigations of thin amorphous Ge-Se-Ga films . Appl Phys A 77, 145–147 (2003). https://doi.org/10.1007/s00339-002-2066-4

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  • DOI: https://doi.org/10.1007/s00339-002-2066-4

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