Abstract.
Behaviors of the photoluminescence blue-band and near-bandgap peak and the relevant thermal ionization energies of the shallow and deep Mg-related acceptors have been studied, respectively. The 2.989 eV blue-band is attributed to the deep donor–acceptor-pair transitions involving a deep Mg-related acceptor at Ev+0.427 eV. The blueshift with increasing excitation power is explained by variation in the contribution of close and distant donor–acceptor-pairs to the luminescence. The redshift with increasing temperature results from thermal release of carriers from close donor–acceptor-pairs. The 3.26 eV near-bandgap peak is attributed to the shallow donor–acceptor-pair transitions involving a shallow Mg-related acceptor at Ev+0.223 eV. The relevant thermal ionization energies of the shallow and deep Mg-related acceptors, being about Ev+0.16 and Ev+0.50 eV, are determined from deep-level transient Fourier spectroscopy measurements.
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Received: 11 July 2001 / Accepted: 9 August 2001 / Published online: 2 May 2002
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Lu, L., Yang, C., Yan, H. et al. Photoluminescence and capacitance transients in highly Mg-doped GaN . Appl Phys A 75, 441–444 (2002). https://doi.org/10.1007/s003390100998
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DOI: https://doi.org/10.1007/s003390100998