Skip to main content
Log in

Growth by laser ablation of Ti-based oxide films with different valency states

  • Regular paper
  • Published:
Applied Physics A Aims and scope Submit manuscript

x

La2/3+yTiO3-δ perovskite (with δ≤0.5) were deposited by the laser ablation technique from Li0.33La0.56TiO3 targets. Their growth onto MgO substrateswas studied as a function of the oxygen pressure. For films grown in vacuum (10-6 mbar), a La0.63TiO2.5 composition was obtained, meaning that Ti3+ alone is present in the films, while Li ions are not incorporated under these conditions. This material shows good electric conductivity (ρ=500 mΩ cm). By contrast, insulating films with a Li0.1La0.70TiO3 composition corresponding to the Ti4+ species were obtained at high oxygen pressures (>0.05 mbar). For all conditions, textured films were grown with different orientations depending on the temperature and the oxygen pressure.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

Author information

Authors and Affiliations

Authors

Additional information

Received: 10 September 1997/Accepted: 24 November 1997

Rights and permissions

Reprints and permissions

About this article

Cite this article

Morcrette, M., Gutiérrez-Llorente, A., Laurent, A. et al. Growth by laser ablation of Ti-based oxide films with different valency states . Appl Phys A 67, 425–428 (1998). https://doi.org/10.1007/s003390050798

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s003390050798

Navigation