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Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode

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Abstract.

A highly (100)-oriented metallic LaNiO3 film was prepared directly on a Si substrate by a simple metalorganic decomposition (MOD) technique using lanthanum nitrate and nickel acetate as the starting sources. Subsequent Pb(Zr,Ti)O3 (PZT) thin films deposited on the LaNiO3-coated Si substrate were obtained by a modified sol–gel method. It was found that the PZT thin films began to form a single perovskite phase at a low annealing temperature of 530 °C, and exhibited highly (100) orientation. A ferroelectric capacitor of Pt/Pb(Zr,Ti)O3/LaNiO3/Si annealed at 600 °C displayed a good P-E hysteresis characteristic and was fatigue-free even after 1011 switching cycles.

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Authors and Affiliations

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China, , , , , , CN

    X.J. Meng, J.L. Sun, J. Yu, G.S. Wang, S.L. Guo & J.H. Chu

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  1. X.J. Meng
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  2. J.L. Sun
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  3. J. Yu
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  4. G.S. Wang
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  5. S.L. Guo
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  6. J.H. Chu
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Received: 25 May 2000 / Accepted: 9 August 2000 / Published online: 30 November 2000

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Meng, X., Sun, J., Yu, J. et al. Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode . Appl Phys A 73, 323–325 (2001). https://doi.org/10.1007/s003390000696

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  • DOI: https://doi.org/10.1007/s003390000696

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