Abstract
Rapid and reliable SIMS profiling of insulators can be achieved by using negative primary ions and a diaphragm placed on the specimen for charge compensation. Results with garnet LPE layers demonstrate the compositional variations arising from non-steady state growth conditions.
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Morgan, A.E., Werner, H.W. & Gourgout, J.M. In-depth concentration profiling of garnet epilayers using secondary ion mass spectrometry. Appl. Phys. 12, 283–286 (1977). https://doi.org/10.1007/BF00915203
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DOI: https://doi.org/10.1007/BF00915203