Abstract
Measurements of doping concentration and mobility of arsenic implanted silicon at high energies and at low energies with following drive-in diffusion are presented. The electrical measurements are compared with and supported by backscattering measurements. Tails which are present after short time anneals vanish during drive-in diffusion. A temperature of at least 825°C is required to fully activate the arsenic and to obtain the same mobility as in diffused samples. Backscattering data reveal an anomaly in the annealing behavior of the damage. After prolonged annealing As shows some accumulation at the surface. For drive-in diffusions lattice location experiments were performed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
V.G.K.Reddi, A.Y.C.Yu: Solid State Technol. No. 10, 35 (1972)
M.K.Barnoski, D.D.Loper: Solid State Electr.16, 441 (1973)
R.J.Scavuzzo, R.S.Payne, K.H.Olson, J.M.Nacci, R.A.Moline, IEDM, Washington, D. C., 1972
T.E.Seidel: In:Ion Implantation in Semiconductors, Ed. by I.Ruge and J.Graul (Springer-Verlag, Berlin, Heidelberg, New York 1971), p. 47
H.Ryssel, H.Müller, K.Schmid, I.Ruge: In:Ion Implantation in Semiconductors and other Materials, Ed. by B.L.Crowder (Plenum Press, New York 1973), p. 215
H.Ryssel, H.Müller, K.Schmid: Appl. Phys.3, 321 (1974)
F.N.Schwettmann: Appl. Phys. Letters22, 570 (1973)
J.W.Mayer, L.Eriksson, J.D.Davies:Ion Implantation in Semiconductors (Academic Press, New York 1970)
H.Ryssel, K.Schmid, H.Müller: J. Phys. E (Sci. Instr.)6, 492 (1973)
J.C.Irvin: Bell Syst. Techn. J.41, 387 (1962)
K.Schmid, H.Müller, H.Ryssel: Nucl. Instr. Meth.99, 121 (1972)
D.A.Thompson, W.D.Mackintosh: J. Appl. Phys.42, 3969 (1971)
K.Schmid: Rad. Effects17, 201 (1973)
J.F.Ziegler, M.H.Brodsky: J. Appl. Phys.44, 188 (1973)
J.S.Sandhu, J.L.Reuter: IBM J. Dev.15, 464 (1971)
J.Lindhard, M.Scharff, H.E.Schiøtt: Kgl. Danske Videnskab Selskab, Mat. Fys. Medd.33, No. 14 (1973)
D.M.Caughy, R.E.Thomas: Proc. IEEE55, 2192 (1967)
V.J.Fistul':Heavily Doped Semiconductors (Plenum Press, New York 1969)
W.S.Johnson, J.F.Gibbons:Projected Range Statistics in Semiconductors, Stanford University Bookstore (1969)
B.L.Crowder: Electrochemical Soc.118, 943 (1971)
M.Iwaki, K.Gamo, K.Masuda, S.Namba, S.Ishihara, J.Kimura: In:Ion Implantation in Semiconductors and other Materials, Ed. by B.L.Crowder (Plenum Press, New York 1973), p. 111
H.Müller, K.Schmid, H.Ryssel, I.Ruge: In:Ion Implantation in Semiconductors and other Materials, Ed. by B.L.Crowder (Plenum Press, New York 1973), p. 203
R.B.Fair, G.R.Weber: J. Appl. Phys.44, 273 (1973)
D.P.Kennedy, P.C.Murley: Proc. IEEE59, 335 (1971)
O.Meyer, I.Gyulai, J.W.Mayer: Surf. Science22, 263 (1970)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Müller, H., Kranz, H., Ryssel, H. et al. Electrical and backscattering measurements of arsenic implanted silicon. Appl. Phys. 4, 115–123 (1974). https://doi.org/10.1007/BF00884266
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00884266