ExLibris header image
SFX Logo
Title: Experimental observations of the thermal stability of high-k gate dielectric materials on silicon
Source:

Journal of Non-Crystalline Solids [0022-3093] Lysaght, P S yr:2002


Collapse list of basic services Basic
Sorry, no full text available...
Please use the document delivery service (see below)  
Holding information
Holdings in library search engine ALBERT GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Downey, D. "Ultrashallow junction formation by ion implant and RTA." Solid State Technology 40.12 (1997): 71-82. Link to SFX for this item
2. Jones, E C. "Plasma immersion ion implantation for electronic materials." Japanese journal of applied physics 35.2 SUPPL. B (1996): 1027-1036. Link to SFX for this item
3. GRIDER, D. "ULTRA-SHALLOW RAISED P+-N JUNCTIONS FORMED BY DIFFUSION FROM SELECTIVELY DEPOSITED IN-SITU DOPED SI0.7GE0.3." Journal of Electronic Materials 24.10 (1995): 1369-1376. Link to Full Text for this item Link to SFX for this item
4. Nandakumar, M. "Shallow trench isolation for sub-0.13 µm CMOS technologies." Technical Digest - International Electron Devices Meeting (1997): 657-660. Link to Full Text for this item Link to SFX for this item
5. Chu, P.K. K. "Principles and characteristics of a new generation plasma immersion ion implanter." Review of scientific instruments 68.4 (1997): 1866-1874. Link to Full Text for this item Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced