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Title:
Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
Source:
Journal of Crystal Growth [0022-0248] Potin, V yr:2004
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author:
Potin, V
Hahn, E
Rosenauer, A
Gerthsen, D
Kuhn, B
Scholz, F
Dussaigne, A
Damilano, B
Grandjean, N
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author:
Potin, V
Hahn, E
Rosenauer, A
Gerthsen, D
Kuhn, B
Scholz, F
Dussaigne, A
Damilano, B
Grandjean, N
last name
initials
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author:
Potin, V
Hahn, E
Rosenauer, A
Gerthsen, D
Kuhn, B
Scholz, F
Dussaigne, A
Damilano, B
Grandjean, N
last name
initials
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