SFX by Ex Libris Inc.

Title:	Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals
Source:	Journal of Crystal Growth [0022-0248] Dornberger, E yr:1997

Basic

Full text

Full text available via EZB-NALI5-00465 Elsevier Archive NL

Year:

Volume:

Issue:

Start Page:

Document delivery

Request document via Library/Bibliothek

Users interested in this article also expressed an interest in the following:
description	1.	HU, S. "FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON." Journal of applied physics 45.4 (1974): 1567-1573.
description	2.	Wang, Jong H. "Numerical Analysis for the Dynamics of the Oxidation-Induced Stacking Fault in Czochralski-Grown Silicon Crystals." Korean journal of chemical engineering 18.1 (2001): 81-87.
description	3.	Porrini, M. "Impact of antimony doping on microdefect formation in Czochralski grown silicon crystals." Crystal research and technology 40.10-11 (2005): 1054-1059.
description	4.	Holloway, H. "Determination of the lattice contraction of boronâdoped silicon." Journal of applied physics 73.1 (1993): 103-111.
description	5.	Taniguchi, K. "Oxidation enhanced diffusion of boron and phosphorus in (100) silicon." Journal of the Electrochemical Society 127.10 (1980): 2243-8.
description	6.	Oh, Hyun J. "RESEARCH PAPERS - Numerical Analysis for the Dynamics of the Oxidation-Induced Stacking Fault in Czochralski-Grown Silicon Crystals." Korean journal of chemical engineering 18.1 (2001): 81-87.
description	7.	Jaccodine, R J. "Extrinsic Stacking Faults in Silicon After Heating in Wet Oxygen." Applied physics letters 8.1 (1966): 29-.
description	8.	Ravi, KV. "Oxidation-induced stacking faults in silicon. I. Nucleation phenomenon." Journal of applied physics 45.1 (1974): 263-271.
description	9.	VARKER, C. "ELECTRICALLY ACTIVE STACKING-FAULTS IN SILICON." Journal of the Electrochemical Society 120.4 (1973): 533-541.
description	10.	Kogler, R. "Cu gettering in ion implanted and annealed silicon in regions before and beyond the mean projected ion range." Journal of applied physics 94.6 (2003): 3834-3839.
description	11.	Piwowarska, D. "Growth and characterization of pure and Co2+-doped Li2B4O7 single crystals." Crystal research and technology 42.12 (2007): 1329-1334.
description	12.	Gossmann, H.-J. J. "Determination of Si self-interstitial diffusivities from the oxidation-enhanced diffusion in B doping-superlattices: The influence of the marker layers." Journal of applied physics 77.5 (1995): 1948-1951.
description	13.	Wang, Y. "The Oxidation Kinetics of Thin Polycrystalline Silicon Films." Journal of the Electrochemical Society 138.1 (1991): 214-.
description	14.	DUNHAM, ST. "POINT-DEFECT GENERATION DURING OXIDATION OF SILICON IN DRY OXYGEN .2. COMPARISON TO EXPERIMENT." Journal of applied physics 59.7 (1986): 2551-2561.
description	15.	Sahli, W. "Ab initio calculations for point defect clusters with P, As, and Sb in Si." Physical review. B, Condensed matter and materials physics 80.7 (2009): 75208-75208.
description	16.	John, J. "Phosphorus diffusion in isoconcentration backgrounds under inert conditions in silicon." Applied physics letters 62.12 (1993): 1388-9.
description	17.	Kelly, JF. "Anisotropy of second-order nonlinear optical susceptibilities of arsenic triiodide-sulfur addition complex: ASI(3) center dot 3S(8)." Optics communications 264.1 (2006): 35-44.
description	18.	Furuya, H. "Semiconductors - Defects in the Oxidation-Induced Stacking Fault Ring Region in Czochralski Silicon Crystal." Japanese journal of applied physics 37.6 (1998): 3194-3199.
description	19.	Lawrence, J E. "Stacking Faults in Annealed Silicon Surfaces." Journal of applied physics 40.1 (1969): 360-365.
description	20.	QUEISSER, PGG J. "GROWTH OF LATTICE DEFECTS IN SILICON DURING OXIDATION." Journal of applied physics 35.10 (1964): 3066-.