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Title:
Molecular beam epitaxy (MBE) growth and structural properties of GaN and AlN on 3C-SiC(001) substrates
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Journal of Crystal Growth [0022-0248] Gerthsen, D yr:1999
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Gerthsen, D
Neubauer, B
Dieker, Ch
Lantier, R
Rizzi, A
Lüth, H
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Neubauer, B
Dieker, Ch
Lantier, R
Rizzi, A
Lüth, H
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Neubauer, B
Dieker, Ch
Lantier, R
Rizzi, A
Lüth, H
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