Abstract
It was found experimentally that the radiation of a gas laser could be modulated and amplified by a semiconductor laser diode. Pulse modulation of the Ar–O2 gas laser radiation was achieved using a GaAs diode with antireflection-coated or uncoated faces. The power of the radiation passed through the diode increased by a factor of 7–10 under pulse conditions (pure amplification). The top of the modulated pulse was distorted by the heat evolved in the active region of the diode. The limitations imposed on the pulse duration by this heating effect were estimated.