Abstract
It is well known that the density of current carriers (electrons and holes) in a germanium crystal can be increased by injection from a rectifying contact. The purpose of this paper is to show that large changes in carrier concentration can be obtained in near-intrinsic germanium by the reverse of injection, namely extraction. This technique allows some new fundamental experiments to be made and, by way of example, an experiment on the drift mobility of carriers in intrinsic germanium is described.