ExLibris header image
SFX Logo
Title: Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
Source:

Japanese Journal of Applied Physics [0021-4922] Akasaki, Isamu yr:1995


Collapse list of basic services Basic
Sorry, no full text available...
Please use the document delivery service (see below)  
Holding information
Holdings in library search engine ALBERT GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Taniyasu, Y. "Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices." Applied physics letters 99.25 (2011): 251112-. Link to Full Text for this item Link to SFX for this item
2. Amano, H. "Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure." Applied physics letters 64.11 (1994): 1377-1379. Link to Full Text for this item Link to SFX for this item
3. Amano, H. "Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE using an AlN buffer layer." Japanese journal of applied physics 29.2 (1990): -6. Link to SFX for this item
4. NAKAMURA, S. "GROWTH OF INXGA(1-X)N COMPOUND SEMICONDUCTORS AND HIGH-POWER INGAN/AIGAN DOUBLE-HETEROSTRUCTURE VIOLET-LIGHT-EMITTING DIODES." Microelectronics journal 25.8 (1994): 651-659. Link to SFX for this item
5. Scholz, F. "Internal quantum efficiency and carrier injection efficiency ofc-plane, {101‾1} and {112‾2} InGaN/GaN-based light-emitting diodes." Physica status solidi. B, Basic research 253.1 (2016): 174-179. Link to Full Text for this item Link to SFX for this item
6. RAZEGHI, M. "VERY LOW THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LP MOCVD." Electronics letters 19.9 (1983): 336-337. Link to SFX for this item
7. Darakehieva, V. "Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers." Journal of Crystal Growth 2007. 233-238. Link to SFX for this item
8. Nakamura, Shuji i. "High-brightness in InGaN blue, green and yellow light-emitting diodes with quantum well structures." Japanese journal of applied physics 34.7 A (1995). Link to SFX for this item
9. Iida, K. "350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN." Japanese journal of applied physics 43.4A; ISSU 408 (2004): 499-500. Link to SFX for this item
10. NAKAMURA, S. "HIGH-POWER INGAN/GAN DOUBLE-HETEROSTRUCTURE VIOLET LIGHT-EMITTING-DIODES." Applied physics letters 62.19 (1993): 2390-2392. Link to Full Text for this item Link to SFX for this item
11. Akasaki, I. "Growth of GaN and AlGaN for UV/blue p-n junction diodes." Journal of Crystal Growth 128.1-4 (1993): 379-383. Link to Full Text for this item Link to SFX for this item
12. NAKAMURA, S. "THERMAL ANNEALING EFFECTS ON P-TYPE MG-DOPED GAN FILMS." Japanese journal of applied physics. Part 1, Regular papers & short notes 31.2B (1992): 139-142. Link to SFX for this item
13. Wu, G. "Investigation of GaN crystal quality on silicon substrates using GaN/AlN superlattice structures." Crystal research and technology 42.12 (2007): 1276-1280. Link to Full Text for this item Link to SFX for this item
14. Waltereit, P. "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes." Nature 406.6798: 865-868. Link to SFX for this item
15. NAKAMURA, S. "HIGH-POWER INGAN SINGLE-QUANTUM-WELL-STRUCTURE BLUE AND VIOLET LIGHT-EMITTING-DIODES." Applied physics letters 67.13: 1868-1870. Link to SFX for this item
16. Imada, M. "Metal-insulator transitions." Reviews of modern physics 70.4 (1998): 1039-1263. Link to Full Text for this item Link to SFX for this item
17. Dagotto, E. "Correlated electrons In high-temperature superconductors." Reviews of modern physics 66.3 (1994): 763-840. Link to Full Text for this item Link to SFX for this item
18. Lee, Patrick A. A. "Doping a Mott insulator: Physics of high-temperature superconductivity." Reviews of modern physics 78.1 (2006): 17-85. Link to Full Text for this item Link to SFX for this item
19. NAKAMURA, S. "HOLE COMPENSATION MECHANISM OF P-TYPE GAN FILMS." Japanese journal of applied physics. Part 1, Regular papers & short notes 31.5A (1992): 1258-1266. Link to SFX for this item
20. NAKAMURA, S. "HIGH-QUALITY INGAN FILMS GROWN ON GAN FILMS." Japanese journal of applied physics. 31.10B (1992): -9. Link to SFX for this item
View More...
View Less...
Select All Clear All

Expand list of advanced services Advanced