Heterointerface Field Effect Transistor with 200 A-Long Gate

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Copyright (c) 1988 The Japan Society of Applied Physics
, , Citation Akira Ishibashi et al 1988 Jpn. J. Appl. Phys. 27 L2382 DOI 10.1143/JJAP.27.L2382

1347-4065/27/12A/L2382

Abstract

AlGaAs/GaAs heterointerface field effect transistor (FET) with a gate-length comparable with electron de Broglie wavelength has been fabricated for the first time by the electron-beam-induced resist process, which demonstrates the possibility of `universal' FET. The transconductance maximum is found to be at the gate length three times as large as the channel depth.

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10.1143/JJAP.27.L2382