Abstract
A δ-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor exhibiting high breakdown voltage at high temperature and excellent pinch-off properties has been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The gate-to-drain breakdown voltages are as high as 62 V (300 K) and 42 V (500 K) contributed by δ-doping the high band-gap In0.49Ga0.51P insulator layer. An improved gate voltage swing of about 2.3 V is also achieved. Furthermore, the device demonstrated excellent pinch-off properties when a carrier-retarding AlGaAs buffer layer was inserted. The above results indicate that the present structure is promising for high power and high temperature ambient device applications.