Localised defect states in electron-irradiated Pb1-xSnxSe alloys

E P Skipetrov; V P Dubkov; B B Kovalev

doi:10.1088/0268-1242/4/9/021

Semiconductor Science and Technology

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Localised defect states in electron-irradiated Pb_1-xSn_xSe alloys

E P Skipetrov¹, V P Dubkov¹ and B B Kovalev¹

Published under licence by IOP Publishing Ltd
Semiconductor Science and Technology, Volume 4, Number 9 Citation E P Skipetrov et al 1989 Semicond. Sci. Technol. 4 831 DOI 10.1088/0268-1242/4/9/021

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¹ Dept. of Low Temp. Phys., Moscow State Univ., USSR

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Abstract

The effect of pressure on the galvanomagnetic properties of electron-irradiated n-Pb_1-xSn_xSe (0.07<or=x<or=0.125) has been investigated. The electron concentration as a function of pressure is used to determine the parameters of the band of radiation-induced resonant states and to reconstruct the energy spectrum of Pb_1-xSn_xSe alloys irradiated with electrons.

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