ExLibris header image
SFX Logo
Title: The effect of gate length variation on InAlGaN/GaN HFET device characteristics
Source:

Semiconductor Science and Technology [0268-1242] Ketteniss, N yr:2012


Collapse list of basic services Basic
Full text
Full text available via EZB-NALIM-00482 IOP Archive NL
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Hodges, C. "Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers." Applied physics letters 100.11 (2012): 112106-112106. Link to Full Text for this item Link to SFX for this item
2. Rivera, C. "Photocurrent gain mechanism in Schottky barrier photodiodes with negative average electric field." Applied physics letters 89.26 (2006): 263505-. Link to Full Text for this item Link to SFX for this item
3. Joh, J. "Critical voltage for electrical degradation of GaN high-electron mobility transistors." IEEE electron device letters 29.4 (2008): 287-289. Link to Full Text for this item Link to SFX for this item
4. Montes Bajo, M. "Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors." Applied physics letters 104.22 (2014): 223506-. Link to Full Text for this item Link to SFX for this item
5. Li, Carl V. "Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors." Applied physics letters 100.17 (2012): 172109-172109. Link to Full Text for this item Link to SFX for this item
6. Hsu, A. "High Frequency Performance of Graphene Transistors Grown by Chemical Vapor Deposition for Mixed Signal Applications." Japanese journal of applied physics 50.7 (2011): 70114-. Link to SFX for this item
7. Simms, R.J.T. T. "Electric field distribution in AlGaN/GaN high electron mobility transistors investigated by electroluminescence." Applied physics letters 97.3 (2010): 33502-33502. Link to Full Text for this item Link to SFX for this item
8. Budimir, M. "Extension of the dielectric tunability range in ferroelectric materials by electric bias field antiparallel to polarization." Applied physics letters 88.8 (2006): 82903-. Link to Full Text for this item Link to SFX for this item
9. Meneghesso, G. "Reliability of GaN high-electron-mobility transistors: State of the art and perspectives." IEEE transactions on device and materials reliability 8.2 (2008): 332-343. Link to Full Text for this item Link to SFX for this item
10. Chowdhury, U. "TEM observation of crack- and pit-shaped defects in electrically degraded GaNHEMTs." IEEE electron device letters 29.10 (2008): 1098-1100. Link to Full Text for this item Link to SFX for this item
11. Aubry, R. "SThM temperature mapping and nonlinear thermal resistance evolution with bias on AlGaN/GaN HEMT devices." IEEE transactions on electron devices 54.3 (2007): 385-390. Link to SFX for this item
12. Park, S.-H. H. "Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects." Journal of applied physics 87.1 (2000): 353-364. Link to SFX for this item
13. Gui, Ee-Ling L. "Electrical detection of hybridization and threading intercalation of deoxyribonucleic acid using carbon nanotube network field-effect transistors." Applied physics letters 89.12 (2006): 232104-1. Link to Full Text for this item Link to SFX for this item
14. Pomeroy, James W. "Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers." IEEE Electron Device Letters 35.10 (2014): 1007-1009. Link to Full Text for this item Link to SFX for this item
15. Schwierz, F. "Graphene Transistors: Status, Prospects, and Problems." Proceedings of the IEEE 101.7 (2013): 1567-1584. Link to SFX for this item
16. Chung, Jinwook W. "On-wafer integration of nitrides and Si devices: Bringing the power of polarization to Si." 2009 IEEE MTT-S International Microwave Symposium Digest 2009. 1117-1120. Link to Full Text for this item Link to SFX for this item
17. del Alamo, Jesus A. "Impact of gate placement on RF power degradation in GaN high electron mobility transistors." Microelectronics and reliability 52.1 (2012): 33-38. Link to SFX for this item
18. Gao, F. "Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors." Applied physics letters 99.22 (2011): 223506-223506. Link to Full Text for this item Link to SFX for this item
19. Gwynne, P. "Q&A Tomas Palacios Taking charge." Nature 483.7389 (2012). Link to Full Text for this item Link to SFX for this item
20. Batten, T. "Temperature analysis of AlGaN/GaN based devices using photoluminescence spectroscopy: Challenges and comparison to Raman thermography." Journal of applied physics 107.7 (2010): 74502-74502. Link to SFX for this item
View More...
View Less...
Select All Clear All

Expand list of advanced services Advanced