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Title:
The effect of gate length variation on InAlGaN/GaN HFET device characteristics
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Semiconductor Science and Technology [0268-1242] Ketteniss, N yr:2012
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author:
Ketteniss, N
Behmenburg, H
Lecourt, F
Defrance, N
Hoel, V
De Jaeger, J C
Heuken, M
Kalisch, H
Vescan, A
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author:
Ketteniss, N
Behmenburg, H
Lecourt, F
Defrance, N
Hoel, V
De Jaeger, J C
Heuken, M
Kalisch, H
Vescan, A
last name
initials
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author:
Ketteniss, N
Behmenburg, H
Lecourt, F
Defrance, N
Hoel, V
De Jaeger, J C
Heuken, M
Kalisch, H
Vescan, A
last name
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