Piezoelectric Properties of Lead-Free (Na,Bi)TiO3–BaTiO3 (001) Epitaxial Thin Films around the Morphotropic Phase Boundary

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Published 22 October 2010 • ©2010 The Japan Society of Applied Physics
, , Citation Takakiyo Harigai et al 2010 Appl. Phys. Express 3 111501 DOI 10.1143/APEX.3.111501

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1 Advanced Technology Research Laboratories, Panasonic Corporation, 3-4 Hikaridai, Seika, Kyoto 619-0237, Japan

Dates

  1. Received 1 September 2010
  2. Accepted 29 September 2010
  3. Published

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Abstract

The piezoelectric properties and the crystallographic nature of (1-x)(Na,Bi)TiO3–xBaTiO3 (NBT–BT) thin films around the morphotropic phase boundary (MPB) composition (x=0.05–0.10) were studied. NBT–BT thin films were grown epitaxially on Pt(100)/MgO(100) substrates by RF magnetron sputtering and exhibited highly (001)-oriented single-phase perovskite with a tetragonal structure. A maximum piezoelectric coefficient e31 of -14.4 C/m2 was obtained at the x = 0.07 composition of the tetragonal side near MPB (x = 0.06). These results indicate that NBT–BT thin films around the MPB are a promising lead-free replacement for Pb(Zr,Ti)O3 (PZT) based applications.

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10.1143/APEX.3.111501