Study and production of thin-film memristors based on TiO2 – TiOx layers

E V Zhidik; P E Troyan; Y V Sakharov; Y S Zhidik; D V Korzhenko

doi:10.1088/1757-899X/498/1/012022

IOP Conference Series: Materials Science and Engineering

Paper • The following article is Open access

Study and production of thin-film memristors based on TiO₂ – TiO_x layers

E V Zhidik^1,2, P E Troyan¹, Y V Sakharov¹, Y S Zhidik¹ and D V Korzhenko²

Published under licence by IOP Publishing Ltd
IOP Conference Series: Materials Science and Engineering, Volume 498, 2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies" 1–2 June 2017, Moscow, Russia Citation E V Zhidik et al 2019 IOP Conf. Ser.: Mater. Sci. Eng. 498 012022 DOI 10.1088/1757-899X/498/1/012022

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baturina_e.v@mail.ru

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¹ Tomsk State University of Control Systems and Radio-Electronics, pr. Lenina, 40, Tomsk, 634050, Russia

² Institute of Physics and Technology, National Research Tomsk Polytechnic University, pr. Lenina, 30, Tomsk, 634050, Russia

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Abstract

Results of production of thin-film memristor MIM-structures based on the stoichiometric (TiO₂) and nonstoichiometric (TiO_x) titanium oxides and contacts without precious and rare-earth metals are given. It is shown that such memristor structures without precious metals show its operability only after the process of electrical forming.

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