Short and long term ionizing radiation effects on charge-coupled devices in radiation environment of high-intensity heavy ion accelerators

Radiation effects on semiconductor devices is a topical issue for high-intensity accelerator projects. In particular it concerns Charge-Coupled Device (CCD) cameras, which are widely used for beam profile monitoring and surveillance in high radiation environment. One should have a clear idea of short and long term radiation effects on such devices. To study these effects, a CCD camera was placed in positions less than half meter away from beam loss point. Primary heavy ion beam of 0.95GeV/n Uranium was dumped into a thick aluminium target creating high fluences of secondary particles (e.g., gammas, neutrons, protons). Effects of these particles on CCD camera were scored with LabView based acquisition software. Monte Carlo calculations with FLUKA code were performed to obtain fluence distributions for different particles and make relevant comparisons. Long term total ionising dose effects are represented by dark current increase, which was scored throughout experiment. Instant radiation effects are represented by creation of charge in CCD cells by ionising particles. Relation of this charge to beam intensity was obtained for different camera positions and fluences within 5 orders of magnitude ranges. With high intensities this charge is so high that it may dramatically influence data obtained from CCD camera used in high radiation environment. The linearity of described above relation confirms linear response of CCD to ionizing radiation. It gives an opportunity to find a new application to CCD cameras as beam loss monitors (BLM).