Single-Nucleus Polycrystallization in Thin Film Epitaxial Growth

J. T. Sadowski, G. Sazaki, S. Nishikata, A. Al-Mahboob, Y. Fujikawa, K. Nakajima, R. M. Tromp, and T. Sakurai
Phys. Rev. Lett. 98, 046104 – Published 25 January 2007

Abstract

We have observed, by use of low-energy electron microscopy, the first direct evidence of self-driven polycrystallization evolved from a single nucleus in the case of epitaxial pentacene growth on the Si(111)-H terminated surface. In this Letter we demonstrate that such polycrystallization can develop in anisotropic systems (in terms of crystal structure and/or the intermolecular interactions) when kinetic growth conditions force the alignment of the intrinsic preferential growth directions along the density gradient of diffusing molecules. This finding gives new insight into the crystallization of complex molecular systems, elucidating the importance of nanoscale control of the growth conditions.

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  • Received 3 February 2006

DOI:https://doi.org/10.1103/PhysRevLett.98.046104

©2007 American Physical Society

Authors & Affiliations

J. T. Sadowski1, G. Sazaki1,2, S. Nishikata1, A. Al-Mahboob1, Y. Fujikawa1, K. Nakajima1, R. M. Tromp3, and T. Sakurai1,*

  • 1Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • 2Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8578, Japan
  • 3IBM Research Division, T. J. Watson Research Center, 1101 Kitachawan Road, P.O. Box 218, Yorktown Heights, New York 10598, USA

  • *Corresponding author. Email address: sakurai@imr.tohoku.ac.jp

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Vol. 98, Iss. 4 — 26 January 2007

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