Raman Study of Isotope Effects and Phonon Eigenvectors in SiC

F. Widulle, T. Ruf, O. Buresch, A. Debernardi, and M. Cardona
Phys. Rev. Lett. 82, 3089 – Published 12 April 1999
PDFExport Citation

Abstract

We have measured Raman spectra of several SiC polytypes ( 3C, 6H, 15R) made from natural silicon (28Si) and 30Si. The isotope shifts of the phonon frequencies show characteristic variations with their effective wave vector in the zinc blende 3C modification which arises from Brillouin zone backfolding. This allows us to determine the phonon eigenvectors of 3C SiC for the dispersion branches along the [111] direction. The observed magnitudes of the Si and C ion displacements, as well as their relative phase, confirm bond charge model and ab initio calculations.

  • Received 24 November 1998

DOI:https://doi.org/10.1103/PhysRevLett.82.3089

©1999 American Physical Society

Authors & Affiliations

F. Widulle, T. Ruf, O. Buresch, A. Debernardi, and M. Cardona

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany

References (Subscription Required)

Click to Expand
Issue

Vol. 82, Iss. 15 — 12 April 1999

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×