We propose a new self-limiting assembly model for Si quantum rings on Si(100) where the ring’s formation and evolution are driven by a growth-etching competition mechanism. The as-grown ring structure in a plasma enhanced chemical vapor deposition system has excellent rotational symmetry and superior morphology with a typical diameter, edge width, and height of 150–300, 10, and 5 nm, respectively. Based on this model, the size and morphology can be controlled well by simply tuning the timing procedure. We suggest that this growth model is not limited to certain material system, but provides a general scheme to control and tailor the self-assembly nanostructures into the desired size, shape, and complexity.

• Received 7 November 2006

DOI:https://doi.org/10.1103/PhysRevLett.98.166102