Strong Low-Temperature Photoemission Peak in CeH2.7

L. Schlapbach, J. P. Burger, P. Thiry, J. Bonnet, and Y. Petroff
Phys. Rev. Lett. 57, 2219 – Published 27 October 1986
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Abstract

The growth of a strong peak at EF is observed in photoelectron spectra of CeH2.7 below 70 K in addition to the hydrogen-induced band at 5 eV and the 4f emission at 2 eV. From the photonenergy dependence and from the absence of 4f4d resonance enhancement we conclude that the peak is neither 4f derived nor related to screening or Kondo resonance, but is due to a surface semiconductor-metal transition. It can be explained by the removal of hydrogen from surface sites which pushes d states from the hydrogen band back to EF and results in a metallic surface dihydride.

  • Received 27 May 1986

DOI:https://doi.org/10.1103/PhysRevLett.57.2219

©1986 American Physical Society

Authors & Affiliations

L. Schlapbach

  • Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich-Hönggerberg, CH-8093 Zürich, Switzerland

J. P. Burger

  • Unité Associée 803 Hydrogène et Défauts dans les Métaux, Université de Paris-Sud, F-91405 Orsay, France

P. Thiry, J. Bonnet, and Y. Petroff

  • Laboratoire pour l'Utilisation du Rayonnement Electromagnétique, Université de Paris-Sud, F-91405 Orsay, France

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Vol. 57, Iss. 17 — 27 October 1986

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